Fig. 1
From: Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene
Selective fabrications of 1 T- and 1H-TaSe2 on a BLG substrate. a Schematics of (top) Side- and top-view of atomic structures of TaSe2 and (bottom) the Tgrowth dependent TaSe2 film synthesis on a BLG substrate. b-d ARPES intensity maps of ML TaSe2 films with three different Tgrowth. The formation of b ML 1 T-TaSe2 at Tgrowth = 750 ˚C, c mixed structures of ML TaSe2 at Tgrowth = 600 ˚C, and d ML 1H-TaSe2 at Tgrowth = 450 ˚C. The p- and s-polarized ARPES intensity maps were taken with 63 eV and 50 eV photons, respectively, at 10 K. e–f Core-level photoemission spectra from e Ta 4f- and f Se 3d-levels of ML TaSe2 films. All the data were taken at 10 K