Fig. 2
From: Controlling structure and interfacial interaction of monolayer TaSe2 on bilayer graphene
ARPES spectra of BLG π bands with and without overlaid ML TaSe2 films. a-c ARPES intensity maps of a as-grown BLG on SiC(0001), and BLG π bands covered with ML b 1 T- and c 1H-TaSe2 on a BLG substrate, respectively, taken at the K point of the BLG BZ (KG) perpendicular to the \(\Gamma\)– K direction using p-polarized photons at 10 K. d–f Second derivative of the zoomed-in ARPES intensity maps (dented by the red-dashed rectangle in panel a for d as-grown BLG on SiC(0001), and BLG π bands covered with ML e 1 T- and f 1H-TaSe2 on a BLG substrate, respectively. Two non-dispersive bands with broad and weak spectral intensity at ~ 0.3 eV and ~ 0.9 eV below EF in b originate from ML 1 T-TaSe2. The red curves in panels d and e are energy distribution curves of the second derivative maps taken at ky = 0.0 Å−1. The yellow dashed lines and arrows indicate ED. The orange and red dashed circles and arrows in panel f represent kinked structures of BLG π bands. MG (the M point of the BLG BZ) and KG in the inset indicates the high symmetry points of BLG