Figure 3From: Graphene nanoribbon devices at high bias High bias transport data from a ribbon with W=70 nm and L=500 nm measured at room temperature in vacuum. (a) Current vs. source drain bias at varying gate voltages V g , as shown in the legend. (b) Conductance vs. gate voltage for the same device at a source drain bias of V sd  = 200 meV.Back to article page