Figure 7From: Graphene nanoribbon devices at high bias Current-voltage characteristics for a dual-gated device with W=35 nm and L=2 μm measured at room temperature in vacuum. (a) I–V sd at constant V bg = -40 V and varying V tg . Select curves are shown in color and have V tg values as noted in the legend, the black curves fall between these curves at 0.5 V increments. (b) G-V tg at varying V bg values, as noted on each curve, measured with V sd =1 meV. Colored dots correspond to the gate voltage positions where the colored curves in Figure 7 (a) were measured.Back to article page