Figure 8From: Graphene nanoribbon devices at high bias Kink and current saturation. (a) An I–V sd curve for the device in Figure 7, highlighting the current saturation “kink” behavior. (b) G-V tg for the same device; the red “x” highlights the low bias (V sd =1 meV) conditions corresponding to the curve in (a). (c) Cartoon schematic of the Fermi level in the channel for each condition (I–IV) marked in (a). Dirac cones with different Fermi levels along the length of the channel result from carrier density variation along the channel under the influence of a strong V sd .Back to article page