Figure 4

Dependencies of the exposure dose, the (number averaged) molecular weight M _n and the glass transition temperature T _g for electron-beam exposed PMMA films which is used in this contribution by selective topography equilibration (i.e. TASTE). When the material properties of PMMA resist are modified by exposure to high energy (100 keV) electrons (a), the resulting correlation of T_g over M_n shows a smooth transition (b). By creating a wide range of T_g, the selective shape transformation of the exposed (and thus T_g lowered) resist is accomplished, when the reflow temperature is adequately chosen, e.g. at least 10 K higher than the highest T_g present in the PMMA contour.