From: Interface engineering for high performance graphene electronic devices
 | Graphene/metal separation | Graphene delivery to target substrate | Graphene isolation (its supporting layer) | Degree of freedom | Renewability of metal substrate | Origin of graphene defects c | References |
---|---|---|---|---|---|---|---|
Conventional polymer-assisted, wet transfer | Metal etching | Water-mediated scooping | O (PMMA) | High | X | Metal etching process | |
Electrochemical delamination/transfer | Electrochemical delamination by H2 bubbles | Water-mediated scooping | O (PMMA) | High | O | H2 bubbles | |
Adhesive-assisted dry transfer | Mechanical delamination by adhesive | Direct transfera | X (NA)b | Very low | O | Incomplete delamination | |
Dry transfer with MET process | Mechanical delamination by MET process | Direct transfera | X (NA)b | Low | O | Incomplete delamination | [55] |
Transfer printing via direct delamination | Mechanical delamination by pre-treatment | Stamp-mediated printing | O (PVA) | High | O | Incomplete delamination | [56] |