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Table 2 Material properties of various substrates used in graphene devices

From: Interface engineering for high performance graphene electronic devices

  SiO 2 AlN BN DLC SiC (6H)
Band gap (eV) 8.9 6.28 5.97 1.4 3.05
Dielectric constant 3.9 9.14 5.06 2.5-6 9.7
Crystal structure Amorphous Wurtzite Hexagonal Amorphous Hexagonal
Surface phonon energy (meV) 59 83.6 101 <165 116
  1. Reproduced with permission [99]. Copyright 2014, AIP Publishing LLC.