Table 2 Material properties of various substrates used in graphene devices
From: Interface engineering for high performance graphene electronic devices
| Â | SiO 2 | AlN | BN | DLC | SiC (6H) |
|---|---|---|---|---|---|
Band gap (eV) | 8.9 | 6.28 | 5.97 | 1.4 | 3.05 |
Dielectric constant | 3.9 | 9.14 | 5.06 | 2.5-6 | 9.7 |
Crystal structure | Amorphous | Wurtzite | Hexagonal | Amorphous | Hexagonal |
Surface phonon energy (meV) | 59 | 83.6 | 101 | <165 | 116 |