Figure 3From: Revising morphology of 〈111〉-oriented silicon and germanium nanowires Cross sections of 〈111〉-oriented SiNWs with morphology determined by the {112} facets and bounded in the triangle-like shape. All facets are indicated. The top panel: as cut from the bulk with some surface atoms having two dangling bonds on the {112} facets to be shifted towards each other in order to form dimers. The bottom panel: after structural optimization. The diameter of the SiNW is 3.1 nm.Back to article page