Figure 3
From: Role of edge facets on stability and electronic properties of III–V nanowires
The top panel: band structures of III–V NWs without {112} facets and diameters of about 2.6 nm, which cross section is shown in Figure 1 . Zero at the energy scale corresponds to the Fermi level indicated by the red dashed lines. The bottom panel: band structures of III–V NWs with {112} facets and diameters of about 2.6 nm, which cross section is shown in Figure 1. For GaP, GaAs and GaSb NWs with diameter of 4 nm the top valence band and the bottom conduction band are presented by the blue dashed lines. The bands are aligned to the top of the valence band in the Γ point. Zero at the energy scale corresponds to the top of the valence band.