From: Role of edge facets on stability and electronic properties of III–V nanowires
GaP | GaAs | GaSb | InP | InAs | InSb | |
---|---|---|---|---|---|---|
a bulk | 5.419 | 5.623 | 6.067 | 5.871 | 6.063 | 6.468 |
a ∥ | 5.415 | 5.610 | 6.046 | 5.867 | 6.038 | 6.446 |
d I I I−V | 2.35 | 2.43 | 2.63 | 2.54 | 2.63 | 2.80 |
d V−V | 2.24 | 2.49 | 2.88 | 2.21 | 2.46 | 2.86 |
d I I I−I I I | 2.44 | 2.45 | 2.46 | 2.76 | 2.78 | 2.79 |
q bulk | 0.56 | 0.58 | 0.12 | 0.56 | 0.53 | 0.21 |
q III | 0.47 | 0.38 | 0.20 | 0.45 | 0.39 | 0.25 |
q V | 0.39 | 0.30 | 0.14 | 0.36 | 0.30 | 0.16 |