Figure 8
From: Synthesis, properties and potential applications of two-dimensional transition metal dichalcogenides
Optoelectronic device applications. (a) Optical image of the single-layer MoS2 based top-gate transistor [28]. (b) Raman spectra of single-, bi-, and triple-layer MoS2. The inset image shows the atomic displacements of the two Raman-active modes: E1 2g and A1g [28]. (c) The photoinduced transfer curves of respective top-gate transistors with single-, bi-, and ttriple-layer MoS2 under monochromatic red, green, and UV light [28]. (d) The schematic band diagrams of ITO (gate)/Al2O3 (dielectric)/single (1 L)-, bi (2 L)-, triple (3 L)-layer MoS2 (n-channel) under the light (Elight = hν) illustrate the photoelectric effects for the band gap measurements [28]. (e) The photon energy-dependent ΔQeff plots indicate the approximate optical energy gaps to be 1.35, 1.65, and 1.82 eV for the triple-, bi-, and single-layer MoS2 nanosheets respectively [28].