Figure 9
From: Synthesis, properties and potential applications of two-dimensional transition metal dichalcogenides
Gas sensing devices application. (a) Optical microscope image of an FET device based on 2Â L MoS2 [30]. (b) Real-time current response after exposure of the 2Â L MoS2 FET to increasing concentrations of NO. Inset: A typical adsorption and desorption process of NO on the 2Â L MoS2 FET [30]. (c) Schematic illustration of the fabrication process of MoS2 TFT array on PET substrate and a photograph of the TFT sensor array [33]. (d) Detection of 1.2Â ppm NO2 using MoS2 TFT sensors on PET with different thicknesses of MoS2 thin film [33].