Fig. 4
From: Organic nano-floating-gate transistor memory with metal nanoparticles
Controllable shifts in the threshold voltage of top-gated polymer transistors using Au nano-crystals. a Programming and erasing characteristics of F8T2 FET memory devices. b Transfer characteristics of F8T2 FET devices after thermal evaporation of different thicknesses of Au, from 0.5 to 1.5 nm. c Change of onset voltages and the amount of memory window for polymer transistor memory. d Schematic demonstration of a potential operation mechanism of floating-gate F8T2 FET memory devices. The figure is reproduced from Ref. [47] with permission, copyright 2010, WILEY–VCH Verlag