Table 1 Device parameters used for simulation
From: Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)
HG TFET | High-k-only TFET | SiO2-only TFET | |
|---|---|---|---|
L G (nm) | 50 | 50 | 50 |
t SOI (nm) | 30 | 30 | 30 |
t ins (nm) | 2 | 2 | 2 |
Source/drain doping conc. (cm−3) | 1020 | 1020 | 1020 |
Channel doping conc. (cm−3) | 1015 | 1015 | 1015 |
L high-k (nm) | 5 | 50 | X |
k value of high-k dielectric | 25 | 25 | X |