Table 2 Electrical characteristics summarization of proposed HG TFET compared with previous HG TFET and SiO2-only TFET
From: Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)
Proposed HG TFET | Previous HG TFET | SiO2-only TFET | |
|---|---|---|---|
L G (μm) | 1.0 | 1.0 | 1.0 |
W G (μm) | 2.7 | 2.7 | 2.7 |
T ox (nm) | 5.0 | 3.0 | 5.0 |
V DD (V) | 1.0 | 1.0 | 1.0 |
I on (nA/μm) | 56 | 18 | 0.004 |
I min (pA/μm) | 0.03 | 0.1 | 0.001 |
SSmin (mV/dec) | 130 | 170 | 550 |
SSavg (mV/dec) | 170 | 200 | 650 |
I on/I off | 5.6 × 104 | 1.8 × 104 | 3.5 × 10 |