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Fig. 3 | Nano Convergence

Fig. 3

From: TiO2 based nanostructured memristor for RRAM and neuromorphic applications: a simulation approach

Fig. 3

I–V characteristics of nanostructured memristor device with piecewise linear window function. a1a3 I–V characteristics of memristor device at x = 0.3, x = 0.5, and x = 0.7 respectively with control parameter p = 10. b1b3 I–V characteristics of memristor device at x = 0.3, x = 0.5, and x = 0.7 respectively with control parameter p = 20. c1c3 I–V characteristics of memristor device at x = 0.3, x = 0.5, and x = 0.7 respectively with control parameter p = 30

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