Fig. 3
From: TiO2 based nanostructured memristor for RRAM and neuromorphic applications: a simulation approach
I–V characteristics of nanostructured memristor device with piecewise linear window function. a1–a3 I–V characteristics of memristor device at x = 0.3, x = 0.5, and x = 0.7 respectively with control parameter p = 10. b1–b3 I–V characteristics of memristor device at x = 0.3, x = 0.5, and x = 0.7 respectively with control parameter p = 20. c1–c3 I–V characteristics of memristor device at x = 0.3, x = 0.5, and x = 0.7 respectively with control parameter p = 30