Fig. 6From: TiO2 based nanostructured memristor for RRAM and neuromorphic applications: a simulation approachI–V characteristics of nanostructured memristor device with nonlinear window function. a–f The I–V characteristics of memristor device at x = 0.5 and control parameter p = 1, 3, 5, 10, 20, and 30 respectivelyBack to article page