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Fig. 3 | Nano Convergence

Fig. 3

From: Analysis of contact resistance in single-walled carbon nanotube channel and graphene electrodes in a thin film transistor

Fig. 3

Lch scaling and extracted contact resistance. a The average resistance of the m-SWCNTs and s-SWCNT as a function of Lch at gate voltages of 0 V (m-SWCNT) and − 30 V (s-SWCNT), respectively. b The average resistance of the s-SWCNT as a function of Lch, varying the back-gate from − 30 to − 10 V with steps of 4 V. c The extracted contact resistance of the s-SWCNTs as a function of gate voltage

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