Fig. 3From: Electrically tunable metasurface perfect absorber for infrared frequenciesCarrier density distribution inside the ITO layer based on the MOS model. In calculation, the intrinsic carrier concentration of ITO is assumed 1019 cm−3 (blue line) while 9 V of voltage bias causes the concentration to increase to 1.2 × 1022 cm−3 near the interface (red line)Back to article page