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Fig. 4 | Nano Convergence

Fig. 4

From: Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors

Fig. 4

Current–voltage characteristics of TS device and phase FET. a Current–voltage (I–V) characteristic of TS device. The TS device is turned on at threshold voltage, and tuned off at hold voltage. b Drain current vs. gate voltage (ID–VG) characteristic of phase FET. Both the suppression of off-state leakage current and steep switching characteristic can be achieved, simply by connecting the TS device in series to baseline transistor

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