Fig. 4From: Effect of ribbon width on electrical transport properties of graphene nanoribbonsa Schematic illustration of the fabrication of a GNR FET using a Si NW as a hard etch mask. FESEM images of b a Si NW aligned on graphene between two electrodes, where unscreened graphene was removed, and c a GNR after the removal of the Si NW. d AFM images of GNRs with two different ribbon widths (left: 500 nm and right: 100 nm)Back to article page