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Fig. 3 | Nano Convergence

Fig. 3

From: Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology

Fig. 3

Grain size and boundaries control. a Surface coverage and average domain size of MoS2 as a function of precursor/substrate distance, b effect of precursor/substrate distance on the nuclei density of MoS2 during growth [62], Copyright 2015, Springer Nature. c Flow diagram represents different routes for the synthesis of distinct types TMCs by the chemical vapor deposition method. Different routes indicated the nucleus formation and their growth mechanism as a function of mass flux of precursor and growth rate [52]. Copyright 2018, Springer Nature

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