Fig. 4From: Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphologyOrientation control of TMDs materials. a Rotation of MoS2 seeds as a function of precursor ratio (S/MoO3) during initial nucleation steps [75]. Copyright 2017, American Chemical Society. b Epitaxial growth of MoS2 on mica surface. c SEM image of MoS2 on mica [76]. Copyright 2013, American Chemical Society. d WSe2 on the freestanding graphene membrane [78]. Copyright 2015, American Chemical Society. e SEM image of WS2 on h-BN flake [80]. Copyright 2014, American Chemical SocietyBack to article page