Fig. 3From: Label-free detection of γ-aminobutyric acid based on silicon nanowire biosensorElectrical properties of silicon nanowire-based FET device. a Source–drain current (ISD) versus source–drain voltage (VSD) plots at different gate voltages. b Source–drain current (ISD) versus gate voltage (VG) at a different source–drain voltage (VSD) of the fabricated nanowire pattern on SOI waferBack to article page