Fig. 11From: A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regimeVariation of Transcapacitances \({\text{C}}_{\text{gg}}\), \({\text{C}}_{\text{sg}}\), \({\text{C}}_{\text{dg}}\) as a function of gate voltage \({\text{V}}_{\text{gs}}\). Smaller size symbols (i) are the capacitances as per complete Ballistic model (7) and larger size symbols (ii) are capacitances as per the proposed model (9) and (11) with uniform carrier scatteringBack to article page