Fig. 2From: A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regimeSchematic of a bulk nanoscale MOSFET band diagram under high-drain bias conditions [12]. For the proposed work of SDG MOSFET, a vertical mirror image of the above band diagram is to be considered due to bottom gateBack to article page