Fig. 5From: A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regimeMOSFET band diagram under high drain bias conditions. Here \(\updelta \ll {\text{L}}\) condition is considered. Carrier scattering depends on the critical layer width \(\updelta ,\) near the low field source regionBack to article page