Fig. 6From: A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regimeVariation of Drain current \({\text{I}}_{\text{ds }}\) as a function of \({\text{V}}_{\text{ds}}\) for \({\text{V}}_{\text{gs}}\) = 0.8 V in a SDG MOSFET. The proposed model is verified with the numerical simulation results obtained using MOSFet-PADRE tool [22]Back to article page