Fig. 9From: A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regimeVariation of terminal charges as a function of gate voltage \({\text{V}}_{\text{gs}}\) represented by different symbols. \({\text{Q}}_{\text{g}} ,{\text{Q}}_{\text{d}} \;{\text{and}}\;{\text{Q}}_{\text{s}}\) represent gate, drain and source charge respectivelyBack to article page