Fig. 2From: Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealingHistogram of a delta threshold voltage (∆Vth: difference between two threshold voltage values obtained from double sweep curves), b on/off ratio, c subthreshold swing, and d mobility calculated at VG sweeping rage of − 1 to 3 V at a fixed VD of 0.1 V for no annealed IGZO transistor devices and annealed IGZO transistor devicesBack to article page