Fig. 4From: Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealingDeconvoluted XPS spectra (M–O, VO, and M–OH) of O 1S in a IGZO channel region and b Al2O3 dielectric region before and after post-annealing. c XPS depth profile representing atomic percentages of M–O, VO, and M–OH before and after post-annealing of IGZO/Al2O3 layersBack to article page