Fig. 5From: Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealinga Variation in threshold voltage shift during a 100 DC cycling test (VD = 0.1 V) and b variation in the on and off current during a 5000 cycling test (@ VD = 10 V) before and after post-annealing of the IGZO transistorBack to article page