Fig. 2From: Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrodea IDS–VGS characteristics under dark and illuminated conditions (λ = 400 nm and power ∼ 50 mW/cm2), b ratio between IPhoto and IDark (left side axis) at VGS = − 20 V and IDS (right side axis) at VGS 20 V, c dynamic photosensitivity under pulsed illumination, and d decay time and maximum photocurrent (obtained from Fig. 4.2c) of MoS2 photo-TFT samples with different numbers of MoS2 layersBack to article page