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Fig. 2 | Nano Convergence

Fig. 2

From: Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode

Fig. 2

a IDS–VGS characteristics under dark and illuminated conditions (λ = 400 nm and power  50 mW/cm2), b ratio between IPhoto and IDark (left side axis) at VGS = − 20 V and IDS (right side axis) at VGS 20 V, c dynamic photosensitivity under pulsed illumination, and d decay time and maximum photocurrent (obtained from Fig. 4.2c) of MoS2 photo-TFT samples with different numbers of MoS2 layers

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