Fig. 1From: Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitorMeasured capacitance vs. voltage applied to the ferroelectric capacitor with a few areas. The area of ferroelectric capacitor A, B, C, D, and E is 50 × 50 μm2, 45 × 45 μm2, 40 × 40 μm2, 30 × 30 μm2, and 20 × 20 μm2, respectivelyBack to article page