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Nano Convergence

Table 1 The area of ferroelectric capacitor vs. hysteresis of FE-FDSOI/FE-FinFET

From: Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor

Area of ferroelectric capacitor (μm × μm)

Forward VFerroelectric (V)

Reverse VFerroelectric (V)

Hysteresis (V)

FE-FDSOI

 50 × 50

1.63

− 0.57

2.20

 45 × 45

1.73

− 0.63

2.36

 40 × 40

1.76

− 0.73

2.49

FE-FinFET

 45 × 45

0.57

− 0.43

1

 40 × 40

1.77

− 0.47

2.24

 30 × 30

2.05

− 0.82

2.87

 20 × 20

2.09

− 0.98

3.07

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