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Table 1 The area of ferroelectric capacitor vs. hysteresis of FE-FDSOI/FE-FinFET

From: Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor

Area of ferroelectric capacitor (μm × μm)Forward VFerroelectric (V)Reverse VFerroelectric (V)Hysteresis (V)
FE-FDSOI
 50 × 501.63− 0.572.20
 45 × 451.73− 0.632.36
 40 × 401.76− 0.732.49
FE-FinFET
 45 × 450.57− 0.431
 40 × 401.77− 0.472.24
 30 × 302.05− 0.822.87
 20 × 202.09− 0.983.07