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Table 1 Summary of the electrical properties of SrVO3 thin films compared to ITO

From: Perovskite oxides as transparent semiconductors: a review

Substrate Deposit methods Mobility cm2·V−1·s−1 Carrier concentration cm−3 (× 1022) Resistivity Ω·cm (× 10−5) Ref.
Sn:In2O3 (ITO) On glass substrate Reactive e‐beam evaporation ~30 0.08 ~0.2 [6]
SrTiO3 (STO) PLD 1.35 2.48 0.187 [78]
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) MBE ~10a 2.26 2.8 [16]
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) Hybrid-MBE ~9a 3 [43]
NdGaO3 (NGO) PLD 8.3 2.4 3 [76]
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) PLD ~7a 2.6 3.8 [76]
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) PLD 3.05 2.18 0.12 ~ 0.19 [80]
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) MBE 8.7 2.3 3.2 [81]
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) Sputtering 1.82 1.57 0.2 [84]
  1. aValues estimated graphically