Table 1 Summary of the electrical properties of SrVO3 thin films compared to ITO
From: Perovskite oxides as transparent semiconductors: a review
Substrate | Deposit methods | Mobility cm2·V−1·s−1 | Carrier concentration cm−3 (× 1022) | Resistivity Ω·cm (× 10−5) | Ref. |
|---|---|---|---|---|---|
Sn:In2O3 (ITO) On glass substrate | Reactive e‐beam evaporation | ~30 | 0.08 | ~0.2 | [6] |
SrTiO3 (STO) | PLD | 1.35 | 2.48 | 0.187 | [78] |
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) | MBE | ~10a | 2.26 | 2.8 | [16] |
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) | Hybrid-MBE | ~9a | – | 3 | [43] |
NdGaO3 (NGO) | PLD | 8.3 | 2.4 | 3 | [76] |
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) | PLD | ~7a | 2.6 | 3.8 | [76] |
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) | PLD | 3.05 | 2.18 | 0.12 ~ 0.19 | [80] |
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) | MBE | 8.7 | 2.3 | 3.2 | [81] |
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) | Sputtering | 1.82 | 1.57 | 0.2 | [84] |