Fig. 10From: High-performance printed electronics based on inorganic semiconducting nano to chip scale structuresa Digital image and (b) microscopic image of n-MOSFET. Transistor performance: (c) transfer and (d) output characteristics of n-MOSFET under various bending strain, (e) transfer characteristics under cyclic bending, and (f) reliability test with device to device variation. Reprinted with permission from Ref [26]. Copyright (2018) WILEYBack to article page