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Fig. 11 | Nano Convergence

Fig. 11

From: High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

Fig. 11

ae 3D Schema of UV Photodetector fabrication using contact printed ZnO and Si NWs. Fabrication steps of UV PDs based on ZnO and Si NWs, comprising: (a) definition of 20 mm2 areas on a S1818 photoresist layer by photolithography, followed by an O2 plasma treatment (100 Watt and 0.3 mbar for 1 min). Contact Printing of (b) Si and (c) ZnO NWs. d removal of the photoresist in warm acetone (50 °C for 2 min). e definition of Ti(4 nm)/Au(200 nm) interdigitated electrodes by photolithography and lift-off, where (e1) and (e2) show SEM images of printed ZnO and Si NWs, respectively, bridging a pair of Ti/Au electrodes with a 5 μm gap. f WB equivalent circuit and the expression determining the electric current flowing through ZnO NWs. g Idark and (h) ΔIdark vs. Temp. for WB and single resistance (SR) UV PDs. i Single cycle and (j) multi-cycles measured over time and using a UV LED power density of 4.5 μW/cm2 and a Vin of 0.05 V, keeping a distance between UV LED and the PD surface of 5 cm. Reprinted with permission from Ref. [25]

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