Fig. 6From: Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS2 film and SiO2 growth templateSchematic illustration of the phenomena at the AS and TR-MoS2/SiO2 interface. At the AS-MoS2/SiO2 interface, the interlayer distance decreases due to the formation of S–O bonding, whereas there is no significant change in the interlayer distance at the TR-MoS2/SiO2 interfaceBack to article page