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Nano Convergence
Fig. 4 | Nano Convergence

Fig. 4

From: Quantum hybridization negative differential resistance from non-toxic halide perovskite nanowire heterojunctions and its strain control

Fig. 4

a The optimized atomic structure of van der Waals bundled GeI3-TMSGeI3-GeI3 nanowire junctions based on the 5UC TMSGeI3 channel. Red and blue boxes indicate the electrode regions that are replaced by separate semi-infinite electrode models and retained as scattering regions, respectively, within NEGF quantum transport calculations. b The J-Vb characteristics of the GeI3-5UC TMSGeI3-GeI3 and PbI3-5UC TMSPbI3-PbI3 junctions. c Valance band maxima-region projected local DOS (left panels) and transmission spectra (right panels) of the GeI3-5UC TMSGeI3-GeI3 junction at Vb = 0 V (left) 0.5 V (middle), and 0.8 V (right), respectively. Conduction band minimum-region data are not shown for clarity. Solid and dotted lines indicate the Fermi levels in the GeI3 electrodes and the quasi-Fermi levels in the TMSGeI3 channel, respectively. Blue shaded boxes in b and c indicate the applied voltage windows

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