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Fig. 5 | Nano Convergence

Fig. 5

From: Quantum hybridization negative differential resistance from non-toxic halide perovskite nanowire heterojunctions and its strain control

Fig. 5

a The NDR J-Vb characteristics of the van der Waals bundled GeI3-5UC TMSGeI3-GeI3 junction under + 4% (compressive), 0%, and −4% (tensile) uniaxial strains. b Electronic transmission spectra of the unstrained as well as strained device at different Vb values. Orange and cyan left triangle indicate the points that contribute most strongly to quantum tunneling at NDR peak and valley, respectively. c Electronic band structures of 1D GeI3 columns and quasi-1D TMSGeI3 at +4%, 0%, and 4% uniaxial strains. d Molecular projected Hamiltonian states for the NDR device with compressive strain (top) and without strain (bottom) at the NDR peak (left) and valley (right) positions, respectively. The isosurface level is 3 × 10− 3 Å−3

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