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Table 1 2D material-based non-volatile memory devices and their performance

From: 2D materials: increscent quantum flatland with immense potential for applications

Active layer (thickness)/year

Current switching ratio

Set voltage [V]

Retention

Endurance in cycles

Ref./Year

Graphite [2008]

1.5 × 107

4–6

2 weeks

> 103

[209]

Graphene (1–2 L) [2008]

102

~ 6

24 h

> 105

[210]

Graphitic stripes (~ 10 nm) [2009]

107

3–4

2.2 × 104

[211]

GO thin film (~ 30 nm) [2009]

20

0.3–1

104 s

> 100

[212]

GO thin film (~ 15 nm) [2010]

103

2.5

105 s

> 100

[213]

GO (~ 30 nm) [2010]

103

1.6

107 s

100

[214]

GO thin film (50–100 nm) [2011]

103

0.7

[215]

RGO thin film (20 nm) [2011]

105

7.5

103 s

> 100

[216]

Graphene (1 L) [2012]

106

7

104 s

[217]

rGO-ferrocene film (~ 50 nm) [2012]

103

2

103 s

> 103

[218]

RGO-Au [2011]

2

5

103 s

> 20

[219]

MoS2–PVP (70 nm) [2012]

102

3.5

[220]

PtAg–MoS2 nanobelts in PVP [2014]

5

DRAM

[221]

MoS2/GO hybrid film (~ 100 nm) [2013]

102

1.2

[222]

GO/MoS2/GO (total ~ 20 nm) [2016]

104

4

104

102

[223]

MoS2–PMMA [2017]

102–103

2

105

105

[224]

MoS2–PVA [2016]

102

3

104

103

[225]

MoOx/MoS2 (50–600 nm) [2015]

106

0.1–0.2

104

104

[226]

1 T-MoS2 film (~ 550 nm) [2016]

103

0.1

103

[227]

CVD MoS2 (~ 1 L) [2015]

103

8.3

120

[228]

CVD h-BN (~ 3 nm) [2016]

102

0.72

3 × 103

550

[229]

CVD h-BN (5–7 L) [2017]

10

0.4

 > 350

[230]

BP (~ 3 µm) [2015]

3 × 105

1.5–2

105

[231]

p-type Si (bulk) [2010]

7.5

[232]

p-type Si (bulk) [2011]

16.8

10 years

[233]

Graphene (1 L) [2013]

20

2

1200 s

> 100

[234]