From: 2D materials: increscent quantum flatland with immense potential for applications
Active layer (thickness)/year | Current switching ratio | Set voltage [V] | Retention | Endurance in cycles | Ref./Year |
---|---|---|---|---|---|
Graphite [2008] | 1.5 × 107 | 4–6 | 2 weeks | > 103 | [209] |
Graphene (1–2 L) [2008] | 102 | ~ 6 | 24 h | > 105 | [210] |
Graphitic stripes (~ 10 nm) [2009] | 107 | 3–4 | – | 2.2 × 104 | [211] |
GO thin film (~ 30 nm) [2009] | 20 | 0.3–1 | 104 s | > 100 | [212] |
GO thin film (~ 15 nm) [2010] | 103 | 2.5 | 105 s | > 100 | [213] |
GO (~ 30 nm) [2010] | 103 | 1.6 | 107 s | 100 | [214] |
GO thin film (50–100 nm) [2011] | 103 | 0.7 | – | – | [215] |
RGO thin film (20 nm) [2011] | 105 | 7.5 | 103 s | > 100 | [216] |
Graphene (1 L) [2012] | 106 | 7 | 104 s | – | [217] |
rGO-ferrocene film (~ 50 nm) [2012] | 103 | 2 | 103 s | > 103 | [218] |
RGO-Au [2011] | 2 | 5 | 103 s | > 20 | [219] |
MoS2–PVP (70 nm) [2012] | 102 | 3.5 | – | – | [220] |
PtAg–MoS2 nanobelts in PVP [2014] | – | 5 | DRAM | – | [221] |
MoS2/GO hybrid film (~ 100 nm) [2013] | 102 | 1.2 | – | – | [222] |
GO/MoS2/GO (total ~ 20 nm) [2016] | 104 | 4 | 104 | 102 | [223] |
MoS2–PMMA [2017] | 102–103 | 2 | 105 | 105 | [224] |
MoS2–PVA [2016] | 102 | 3 | 104 | 103 | [225] |
MoOx/MoS2 (50–600 nm) [2015] | 106 | 0.1–0.2 | 104 | 104 | [226] |
1 T-MoS2 film (~ 550 nm) [2016] | 103 | 0.1 | – | 103 | [227] |
CVD MoS2 (~ 1 L) [2015] | 103 | 8.3 | 120 | – | [228] |
CVD h-BN (~ 3 nm) [2016] | 102 | 0.72 | 3 × 103 | 550 | [229] |
CVD h-BN (5–7 L) [2017] | 10 | 0.4 | – | > 350 | [230] |
BP (~ 3 µm) [2015] | 3 × 105 | 1.5–2 | 105 | – | [231] |
p-type Si (bulk) [2010] | 7.5 | – | – | – | [232] |
p-type Si (bulk) [2011] | 16.8 | – | 10 years | – | [233] |
Graphene (1 L) [2013] | 20 | 2 | 1200 s | > 100 | [234] |