Fig. 10
From: A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
Copyright 2020 Wiley‐VCH GmbH. c and d were reproduced from Ref. [57]
The influence of ozone dose/pulse time on the permittivity of hafnia ferroelectric during the deposition process. a Dielectric constant and b 2Pr of HZO (Hf;Zr = 1:1) with different ozone pulse time. c к-V and d current density with ozone dose on HfO2 thin film. a and b were reprinted with permission from Ref. [56].