Fig. 11From: A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technologyComparison of dielectric constant and crystal phase between RTA and HPA-treated Hafnia, Dielectric constant versus electric field (κ–E) curves for different HZO compositions and thickness with a RTA and b HPA. c and d show the phase transition tendency with thickness and composition of HZO system for RTA and HPA respectively. a and b were reproduced from Ref. [60]Back to article page