Fig. 3From: A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technologyCopyright 2015 AIP Publishing LLCElectrical and materials characteristics of HZO thin film. a Capacitance and b polarization versus voltage curves of HZO thin film with various dielectric behavior at different composition of Zr. c Dielectric constant versus Zr concentration for HZO. d Electrical characteristics and e lattice interaction of each phase depending on Zr concentration at HZO system. d and e were redrawn from [43] and simulation data of atomic structure was reproduced with permission from [41].Back to article page