Fig. 7
From: A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
Copyright 2015 American Chemical Society
Dopant dependence of HZO. a Dielectric constant of the Si-doped Zr1−xHfxO2 thin films with ALD deposition cycle ratio [Si /(Si + ZrHf cycles)] and b EOT values with thin film thickness. c Phase diagram of the Si-doped HZO with different Hf fraction and d leakage current density of Si-HZO with EOT (measured at 0.8 V). Reprinted with permission from Ref. [53].