Fig. 8From: A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technologyElectrical characteristics of 9Â nm thick HZO with various composition ratio. Electrical characteristics of 9Â nm-thick HZO with various composition ratio. PE and CV curves were measured at 1 and 10Â kHz respectively. Reprinted with permission from Ref. [54]. Copyright [2012] American Chemical SocietyBack to article page