Fig. 9From: A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technologyDeposition temperature engineering on Al-HfO2. a Free energy landscape with deposition temperature. b Permittivity-electric field curves and c extracted value at 0Â V with deposition temperature. d and e show PE curves and extracted switching probability. f GIXRD and g the derived relative phase fraction of HAO film. Redrawn from Ref. [19]Back to article page