Fig. 1From: Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronicsElectrical behavior of HfO2-x thin films in various electrical phases. a I-V characteristics of the conducting (black) and insulating (red) states. The inset shows a photograph of a flexible device. b Typical unipolar resistive switching behavior in the intermediate states. c Poole–Frenkel fitting result for the HRS for the intermediate states. The inset shows a schematic of carrier hopping in the Poole–Frenkel conduction. d Phase diagram showing various phases as functions of thickness and rf powerBack to article page