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Fig. 1 | Nano Convergence

Fig. 1

From: Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

Fig. 1

Electrical behavior of HfO2-x thin films in various electrical phases. a I-V characteristics of the conducting (black) and insulating (red) states. The inset shows a photograph of a flexible device. b Typical unipolar resistive switching behavior in the intermediate states. c Poole–Frenkel fitting result for the HRS for the intermediate states. The inset shows a schematic of carrier hopping in the Poole–Frenkel conduction. d Phase diagram showing various phases as functions of thickness and rf power

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